GMBT3906 datasheet(2/4 Pages) GSME

2 / 4 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

GMBT3906(销售型號 MMBT3906)

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TA

=25

25℃ unless

unless

unless otherwise

otherwise

otherwise noted

noted

noted 如無特殊說明，溫度爲 25℃))))

■

OFF

OFF CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 截止電特性

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Collector-Emitter Breakdown Voltage(3)

集電極-發射極擊穿電壓(Ic=-1.0mAdc,IB=0)

V(BR)CEO

-40

—

Vdc

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓(Ic=-10μAdc,IE=0)

V(BR)CBO

-40

—

Vdc

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓(IE=-10μAdc,Ic=0)

V(BR)EBO

-6.0

—

Vdc

Base Cutoff Current

基極截止電流(VCE=-30Vdc, VEB =-3.0 Vdc)

IBEX

—

-50

nAdc

Collector Cutoff Current

集電極截止電流(VCE=-30Vdc, VEB =-3.0Vdc)

ICEX

—

-50

nAdc

■

ON CHARCTERISTICS(2)

CHARCTERISTICS(2)

CHARCTERISTICS(2)導通電特性

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

DC Current Gain 直流電流增益

hPE

—

(Ic=-0.1mAdc,VCE=-1.0Vdc)

—

(Ic=-1.0mAdc,VCE=-1.0Vdc)

—

(Ic=-10mAdc,VCE=-1.0Vdc)

100

300

(Ic=-50mAdc,VCE=-1.0Vdc)

—

(Ic=-100mAdc,VCE=-1.0Vdc)

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(Ic=-10mAdc, IB=-1.0mAdc)

(Ic=-50mAdc, IB=-5.0mAdc)

VCE(sat)

—

-0.25

-0.4

Vdc

Base-Emitter Saturation Voltage

基極發射極飽和壓降

(Ic=-10mAdc, IB=-1.0mAdc)

(Ic=-50mAdc, IB=-5.0mAdc)

VBE(sat)

-0.65

—

-0.85

-0.95

Vdc

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