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28F320J5 Datasheet(PDF) 48 Page - Intel Corporation

Part # 28F320J5
Description  StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
PDF  53 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F320J5 Datasheet(HTML) 48 Page - Intel Corporation

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INTEL StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT
E
48
ADVANCE INFORMATION
6.6
AC Characteristics— Write Operations(1,2)
Versions
Valid for All
Speeds
#
Sym
Parameter
Notes
Min
Max
Unit
W1
tPHWL (tPHEL)
RP# High Recovery to WE# (CE
X ) Going
Low
31
µs
W2
tELWL (tWLEL)CE
X (WE#) Low to WE# (CEX) Going Low
8
0
ns
W3
tWP
Write Pulse Width
8
70
ns
W4
tDVWH (tDVEH)
Data Setup to WE# (CE
X ) Going High
4
50
ns
W5
tAVWH (tAVEH)
Address Setup to WE# (CE
X ) Going High
4
50
ns
W6
tWHEH (tEHWH)
CE
X (WE#) Hold from WE# (CEX) High
10
ns
W7
tWHDX (tEHDX)
Data Hold from WE# (CE
X ) High
0
ns
W8
tWHAX (tEHAX)
Address Hold from WE# (CE
X ) High
0
ns
W9
tWPH
Write Pulse Width High
9
30
ns
W10
tPHHWH (tPHHEH)
RP# VHH Setup to WE# (CE
X ) Going High
3
0
ns
W11
tVPWH (tVPEH)
VPEN Setup to WE# (CE
X ) Going High
3
0
ns
W12
tWHGL (tEHGL)
Write Recovery before Read
6
35
ns
W13
tWHRL (tEHRL)
WE# (CE
X ) High to STS Going Low
5
90
ns
W14
tQVPH
RP# VHH Hold from Valid SRD, STS Going
High
3,5,7
0
ns
W15
tQVVL
VPEN Hold from Valid SRD, STS Going High
3,5,7
0
ns
NOTES:
CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of CE0,
CE1, or CE2 that disables the device (see Table 2, Chip Enable Truth Table).
1.
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to
AC Characteristics–Read-Only Operations.
2.
A write operation can be initiated and terminated with either CEX or WE#.
3.
Sampled, not 100% tested.
4.
Refer to Table 4 for valid AIN and DIN for block erase, program, or lock-bit configuration.
5.
STS timings are based on STS configured in its RY/BY# default mode.
6.
For array access, tAVQV is required in addition to tWHGL for any accesses after a write.
7.
VPEN should be held at VPENH (and if necessary RP# should be held at VHH) until determination of block erase, program, or
lock-bit configuration success (SR.1/3/4/5 = 0).
8.
Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low first) to CEX or WE# going high
(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. If CEX is driven low 10 ns before WE# going low,
WE# pulse width requirement decreases to tWP - 10 ns.
9.
Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or WE# going low
(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.



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