| Electronic Components Datasheet Search |
|
28F320J5 Datasheet(PDF) 48 Page - Intel Corporation |
|
|
|||||||||||||||||||||||||||||
28F320J5 Datasheet(HTML) 48 Page - Intel Corporation |
|
48 / 53 page ![]() INTEL StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT E 48 ADVANCE INFORMATION 6.6 AC Characteristics— Write Operations(1,2) Versions Valid for All Speeds # Sym Parameter Notes Min Max Unit W1 tPHWL (tPHEL) RP# High Recovery to WE# (CE X ) Going Low 31 µs W2 tELWL (tWLEL)CE X (WE#) Low to WE# (CEX) Going Low 8 0 ns W3 tWP Write Pulse Width 8 70 ns W4 tDVWH (tDVEH) Data Setup to WE# (CE X ) Going High 4 50 ns W5 tAVWH (tAVEH) Address Setup to WE# (CE X ) Going High 4 50 ns W6 tWHEH (tEHWH) CE X (WE#) Hold from WE# (CEX) High 10 ns W7 tWHDX (tEHDX) Data Hold from WE# (CE X ) High 0 ns W8 tWHAX (tEHAX) Address Hold from WE# (CE X ) High 0 ns W9 tWPH Write Pulse Width High 9 30 ns W10 tPHHWH (tPHHEH) RP# VHH Setup to WE# (CE X ) Going High 3 0 ns W11 tVPWH (tVPEH) VPEN Setup to WE# (CE X ) Going High 3 0 ns W12 tWHGL (tEHGL) Write Recovery before Read 6 35 ns W13 tWHRL (tEHRL) WE# (CE X ) High to STS Going Low 5 90 ns W14 tQVPH RP# VHH Hold from Valid SRD, STS Going High 3,5,7 0 ns W15 tQVVL VPEN Hold from Valid SRD, STS Going High 3,5,7 0 ns NOTES: CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 2, Chip Enable Truth Table). 1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during read-only operations. Refer to AC Characteristics–Read-Only Operations. 2. A write operation can be initiated and terminated with either CEX or WE#. 3. Sampled, not 100% tested. 4. Refer to Table 4 for valid AIN and DIN for block erase, program, or lock-bit configuration. 5. STS timings are based on STS configured in its RY/BY# default mode. 6. For array access, tAVQV is required in addition to tWHGL for any accesses after a write. 7. VPEN should be held at VPENH (and if necessary RP# should be held at VHH) until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0). 8. Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low first) to CEX or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. If CEX is driven low 10 ns before WE# going low, WE# pulse width requirement decreases to tWP - 10 ns. 9. Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or WE# going low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |