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©

1998, 1999

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D13809EJ1V0DS00 (1st edition)

Date Published

June 1999 NS CP(K)

Printed in Japan

The mark 5

5

5

5 shows major revised points.

DESCRIPTION

The

µPA1900 is a switching device which can be driven

directly by a 2.5 V power source.

The

µPA1900 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

FEATURES

• Can be driven by a 2.5 V power source

• Low on-state resistance

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1900TE

6-pin Mini Mold (Thin Type)

Drain to Source Voltage

20

V

Gate to Source Voltage

±12

V

Drain Current (DC)

±5.5

A

Drain Current (pulse)

Note1

±22

A

Total Power Dissipation

0.2

W

Total Power Dissipation

Note2

2W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t

≤ 5 sec.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit : mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.95

12

3

65

4

1.9

2.9 ±0.2

0.32

+0.1

–0.05

0.95

1, 2, 5, 6 : Drain

3

: Gate

4

: Source

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Marking: TG

Gate

Drain