NTD4970N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

6.1

°C/W

Junction−to−TAB (Drain)

4.3

Junction−to−Ambient – Steady State (Note 3)

58.9

Junction−to−Ambient – Steady State (Note 4)

108.9

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

17

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.5

1.9

2.5

V

Negative Threshold Temperature

Coefficient

4.5

mV/

°C

Drain−to−Source On Resistance

8.3

11

m

W

8.2

14.6

21

13.2

Forward Transconductance

34

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

774

pF

Output Capacitance

306

Reverse Transfer Capacitance

161

Total Gate Charge

8.2

nC

Threshold Gate Charge

1.5

Gate−to−Source Charge

3.0

Gate−to−Drain Charge

4.0

Total Gate Charge

15.8

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

10

ns

Rise Time

27.6

Turn−Off Delay Time

12.5

Fall Time

5.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

7. Assume terminal length of 110 mils.