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NTD4970NT4G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTD4970NT4G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() NTD4970N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 6.3 ns Rise Time tr 19.5 Turn−Off Delay Time td(OFF) 16.2 Fall Time tf 3.7 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.97 1.1 V TJ = 125°C 0.88 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 19.6 ns Charge Time ta 10.2 Discharge Time tb 9.4 Reverse Recovery Charge QRR 7.0 nC PACKAGE PARASITIC VALUES Source Inductance (Note 7) LS TA = 25°C 2.85 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK (Note 7) LD 1.88 Gate Inductance (Note 7) LG 4.9 Gate Resistance RG 0.8 2.2 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. ORDERING INFORMATION Device Package Shipping† NTD4970NT4G DPAK (Pb−Free) 2500 / Tape & Reel NTD4970N−1G IPAK (Pb−Free) 75 Units / Rail NTD4970N−35G IPAK Trimmed Lead (Pb−Free) 75 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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