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RF2312 Datasheet(PDF) 6 Page - RF Micro Devices |
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RF2312 Datasheet(HTML) 6 Page - RF Micro Devices |
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6 / 16 page ![]() 3-6 RF2312 Rev C6 051025 Application Schematic 5MHz to 50MHz Reverse Path Application Schematic 10dB Gain 1 2 3 4 8 7 6 5 RF OUT RF IN V CC NOTE 1: Optional resistor R S can be used to maintain the correct bias level at higher supply voltages. This is used to increase output capability or linearity for signals with high crest factors. 10 nF 10 nF 10 μH 30 Ω 100 nF 100 nF R S 1 - 2 k Ω 1 2 3 4 8 7 6 5 RF OUT RF IN R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2 and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness. V CC= 9 - 12 V C1 220 pF R5 1 - 2 k Ω C3 10 nF R2 470 Ω R6 7.5 Ω R7 7.5 Ω C2 220 pF L1 330 nH R1 = 21 - 30 Ω C4 TBD C5 TBD |
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