SILICON TRANSISTOR

FEATURES

•

Low Current, High Gain

•

A Super Mini Mold Package Adopted

•

Built-in 2 Transistors (2

× 2SC5179)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA807T

Loose products

(50 PCS)

µPA807T-T1

Taping products

(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

5V

Collector to Emitter Voltage

3V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

30 in 1 element

mW

60 in 2 elements

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

Document No. P12153EJ2V0DS00 (2nd edition)

(Previous No. ID-3641)

Date Published

November 1996 N

Printed in Japan

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

2.1±0.1

1.25±0.1

PACKAGE DRAWINGS

(Unit: mm)

©

1994

DATA SHEET

©

1995

65

4

12

3

PIN CONNECTIONS

PIN CONFIGURATION (Top View)

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

Embossed tape 8 mm wide. Pin 6

(Q1 Base), Pin 5 (Q2 Base), Pin 4

(Q2 Emitter) face to perforation

side of the tape.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.