IRKT41 datasheet(2/12 Pages) VISHAY

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Document Number: 94419

Revision: 23-Apr-08

VSK.41, .56..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules),

45/60 A

ELECTRICAL SPECIFICATIONS

Notes

(1) I2t for time tx = I2√t x √tx

(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2

(3) 16.7 % x

π x I

AV < I < π x IAV

(4) I >

π x I

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

VDRM, MAXIMUM REPETITIVE

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

IRRM,

IDRM

AT 125 °C

VSK.41/.56

400

500

400

600

700

600

800

900

800

1000

1100

1000

1200

1300

1200

1400

1500

1400

1600

1700

1600

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.41

VSK.56

UNITS

Maximum average on-state current

(thyristors)

IT(AV)

180° conduction, half sine wave,

TC = 85 °C

Maximum average forward current

(diodes)

IF(AV)

Maximum continuous RMS

on-state current, as AC switch

IO(RMS)

100

135

Maximum peak, one-cycle

non-repetitive on-state

or forward current

ITSM

IFSM

t = 10 ms

No voltage

reapplied

Sinusoidal

half wave,

initial TJ = TJ maximum

850

1310

t = 8.3 ms

890

1370

t = 10 ms

100 % VRRM

reapplied

715

1100

t = 8.3 ms

750

1150

t = 10 ms

TJ = 25 °C

no voltage reapplied

940

1450

t = 8.3 ms

985

1520

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

Initial TJ = TJ maximum

3.61

8.56

kA2s

t = 8.3 ms

3.30

7.82

t = 10 ms

100 % VRRM

reapplied

2.56

6.05

t = 8.3 ms

2.33

5.53

t = 10 ms

TJ = 25 °C, no voltage reapplied

4.42

10.05

t = 8.3 ms

4.03

9.60

Maximum I2

√t for fusing

√t (1)

t = 0.1 to 10 ms, no voltage reapplied

36.1

85.6

kA2

√s

Maximum value or threshold voltage

VT(TO) (2)

Low level (3)

TJ = TJ maximum

0.88

0.85

High level (4)

0.91

0.88

Maximum value of on-state

slope resistance

rt (2)

Low level (3)

TJ = TJ maximum

5.90

3.53

High level (4)

5.74

3.41

Maximum peak on-state or

forward voltage

VTM

ITM = π x IT(AV)

TJ = 25 °C

1.81

1.54

VFM

IFM = π x IF(AV)

Maximum non-repetitive rate of

rise of turned on current

dI/dt

TJ = 25 °C, from 0.67 VDRM,

ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

150

A/µs

Maximum holding current

TJ = 25 °C, anode supply = 6 V,

resistive load, gate open circuit

200

Maximum latching current

TJ = 25 °C, anode supply = 6 V, resistive load

400

(RMS)

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