Document Number: 94419

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 23-Apr-08

3

VSK.41, .56..PbF Series

Thyristor/Diode and Thyristor/Thyristor

45/60 A

Vishay High Power Products

Note

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.41 VSK.56

UNITS

Maximum peak gate power

10

W

Maximum average gate power

2.5

Maximum peak gate current

2.5

A

Maximum peak negative gate voltage

10

V

Maximum gate voltage required to trigger

Anode supply = 6 V

resistive load

4.0

2.5

1.7

Maximum gate current required to trigger

Anode supply = 6 V

resistive load

270

mA

150

80

Maximum gate voltage that will not trigger

0.25

V

Maximum gate current that will not trigger

6

mA

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.41

VSK.56

UNITS

Maximum peak reverse and off-state

15

mA

RMS insulation voltage

50 Hz, circuit to base, all terminals shorted

2500 (1 min)

3500 (1 s)

V

Maximum critical rate of rise of off-state voltage

500

V/µs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.41 VSK.56

UNITS

Junction operating and storage

temperature range

- 40 to 125

°C

Maximum internal thermal resistance,

junction to case per module

DC operation

0.23

0.20

K/W

Typical thermal resistance, case to heatsink

Mounting surface flat, smooth and greased

0.1

Mounting torque ± 10 %

to heatsink

A mounting compound is recommended and the

torque should be rechecked after a period of 3

hours to allow for the spread of the compound.

5

Nm

busbar

3

Approximate weight

110

g

4oz.

Case style

JEDEC

TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

RECTANGULAR WAVE CONDUCTION

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.41

0.11

0.13

0.17

0.23

0.34

0.09

0.14

0.18

0.23

0.34

°C/W

VSK.56

0.09

0.11

0.13

0.18

0.27

0.07

0.11

0.14

0.19

0.28