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CDP1821CD3 Datasheet(PDF) 5 Page - Intersil Corporation |
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CDP1821CD3 Datasheet(HTML) 5 Page - Intersil Corporation |
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5 / 7 page ![]() 6-9 Write Cycle Dynamic Electrical Specifications tR, tF = 10ns, CL = 50pF PARAMETER SYMBOL VDD (V) -55oC, +25oC +125oC UNITS MIN MAX MIN MAX Write Cycle Time tWC 5 300 - 420 - ns Address Setup Time (Note 1) tAS 5 60 - 84 - ns Address Hold Time (Note1) tAH 5 130 - 180 - ns Input Data Setup Time (Note 1) tDS 5 90 - 125 - ns Input Data Hold Time (Note 1) tDH 5 60 - 84 - ns Read/Write Pulse Width Low (Note 1) tWL 5 110 - 155 - ns NOTE: 1. 100% testing. All other limits are designer’s parameters under given test conditions and do not represent 100% testing. NOTES: 1. Chip-Select (CS) permitted to change from high to low level or remain low on a selected device. 2. Chip-Select (CS) permitted to change from low to high level or remain low. 3. Don’t care. FIGURE 2. WRITE CYCLE TIMING DIAGRAM CS A0 - A9 R/W (NOTE 3) (NOTE 1) tWC (NOTE 2) (NOTE 3) (NOTE 3) DI tWL tAS tDS tDH tAH CDP1821C/3 |
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