Data Sheet P14556EJ1V0DS00

2

°°°°C)

Ratings

Parameter

Symbol

Q1

Q2

Unit

Collector to Base Voltage

920

V

Collector to Emitter Voltage

610

V

Emitter to Base Voltage

21.5

V

Collector Current

30

65

mA

Total Power Dissipation

Note

180 in 1 element

200 in 1 element

mW

230 in 2 elements

Junction Temperature

150

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm glass epoxy substrate.

°°°°C)

(1) Q1

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

−−

0.1

µA

Emitter Cutoff Current

−−

0.1

µA

DC Current Gain

Note 1

75

−

150

Gain Bandwidth Product

10.0

12.0

−

GHz

Feedback Capacitance

Note 2

−

0.4

0.7

pF

Insertion Power Gain

7.0

8.5

−

dB

Noise Figure

NF

−

1.5

2.5

dB

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.