3

PARAMETER

SYMBOL

TYPE

TEST CONDITIONS

LIMITS

UNITS

MIN

MAX

Drain-Source

Breakdown Volts

(Note 4, 6)

BVDSS

FRE9160D, R

VGS = 0, ID = 1mA

-100

-

V

(Note 5, 6)

BVDSS

FRE9160H

VGS = 0, ID = 1mA

-95

-

V

Gate-Source

Threshold Volts

(Note 4, 6)

VGS(th)

FRE9160D, R

VGS = VDS, ID = 1mA

-2.0

-4.0

V

(Note 3, 5, 6)

VGS(th)

FRE9160H

VGS = VDS, ID = 1mA

-2.0

-6.0

V

Gate-Body

Leakage Forward

(Note 4, 6)

IGSSF

FRE9160D, R

VGS = -20V, VDS = 0

-

100

nA

(Note 5, 6)

IGSSF

FRE9160H

VGS = -20V, VDS = 0

-

200

nA

Gate-Body

Leakage Reverse

(Note 2, 4, 6)

IGSSR

FRE9160D, R

VGS = 20V, VDS = 0

-

100

nA

(Note 2, 5, 6)

IGSSR

FRE9160H

VGS = 20V, VDS = 0

-

200

nA

Zero-Gate Voltage

Drain Current

(Note 4, 6)

IDSS

FRE9160D, R

VGS = 0, VDS = -80V

-

25

µA

(Note 5, 6)

IDSS

FRE9160H

VGS = 0, VDS = -80V

-

100

µA

Drain-Source

On-State Volts

(Note 1, 4, 6)

VDS(on)

FRE9160D, R

VGS = -10V, ID = 30A

-

-2.99

V

(Note 1, 5, 6)

VDS(on)

FRE9160H

VGS = -16V, ID = 30A

-

-4.49

V

Drain-Source

On Resistance

(Note 1, 4, 6)

RDS(on)

FRE9160D, R

VGS = -10V, ID = 19A

-

0.095

Ω

(Note 1, 5, 6)

RDS(on)

FRE9160H

VGS = -14V, ID = 19A

-

0.143

Ω

NOTES:

1. Pulse test, 300

µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13

5. Gamma = 1000KRAD(Si). Neutron = 3E13

6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 6/8/90 on TA17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA

19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, Intersil Application Note AN8831, Oct. 1988

FRE9160D, FRE9160R, FRE9160H