HPLR3103 datasheet(2/6 Pages) INTERSIL

2 / 6 page

6-4

Absolute Maximum Ratings

TC = 25

oC, Unless Othewise Specified

HPLR3103, HPLU3103

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

390

Single Pulse Avalanche Energy (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

240

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.71

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

Zero Gate Voltage Drain Current

IDSS

VDS = 30V, VGS = 0V

µA

VDS = 24V, VGS = 0V, TC = 125

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±16V

100

Breakdown Voltage Temperature

Coefficient

∆V(BR)DSS

∆TJ

Reference to 25oC, ID = 1mA

0.037

Drain to Source On Resistance

(Note 3)

rDS(ON)

ID = 28A, VGS = 10V

0.019

Ω

ID = 23A, VGS = 4.5V

0.024

Ω

Turn-On Delay Time

td(ON)

VDD = 15V, ID ≅ 34A, RL = 0.441Ω,VGS = 4.5V,

RGS =3.4Ω, Ig(REF) = 3mA

-9

Rise Time

210

Turn-Off Delay Time (Note 3)

td(OFF)

-20

Fall Time

-54

Total Gate Charge

VDD = 24V

ID ≅ 34A,

VGS = 4.5V

(Figure 6)

Gate to Source Charge

Qgs

Gate to Drain “Miller” Charge

Qgd

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz (Figure 5)

1600

Output Capacitance

COSS

640

Reverse Transfer Capacitance

CRSS

320

Internal Source Inductance

Measured From the

Source Lead, 6mm (0.25in)

From Package to Center of

Die

Modified MOSFET

Symbol Showing

the Internal Devic-

es Inductances

7.5

Internal Drain Inductance

Measured From the Drain-

Lead, 6mm (0.25in) From

Package to Center of Die

4.5

HPLR3103, HPLU3103

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