IRF830S datasheet(2/6 Pages) KEXIN

2 / 6 page

SMD Type

www.kexin.com.cn

MOSFET

■

Electrical Characteristics Ta = 25℃

Note.1: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

500

VDS=500V, VGS=0V

VDS=400V, VGS=0V,TJ=125℃

250

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

Static Drain-Source On-Resistance

RDS(On)

VGS=10V, ID=2.7A

(Note.1)

1.5

Forward Transconductance

gFS

VDS=50V, ID=2.7A

(Note.1)

2.5

Input Capacitance

Ciss

610

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

Total Gate Charge

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

Internal Drain Inductance

4.5

Internal Source Inductance

7.5

Turn-On DelayTime

td(on)

8.2

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

640

Body Diode Reverse Recovery Charge

Qrr

Continuous Source-Drain Diode Current

4.5

Pulsed Diode Forward Current

ISM

Diode Forward Voltage

VSD

IS=4.5A,VGS=0V,TJ = 25°C

1.6

VGS=10V, VDS=400V, ID=3.1A

TJ = 25°C, IF = 3.1A, dI/dt = 100A/μs

Zero Gate Voltage Drain Current

IDSS

VDD = 250 V, ID = 3.1 A,

Rg = 12Ω, RD = 79Ω

(Note.1)

VGS=0V, VDS=25V, f=1MHz

Between lead,

6 mm (0.25") from

package and center of

die contact

MOSFET symbol

showing the

integral reverse

p - n junction diode

N-Channel MOSFET

IRF830S (KRF830S)

IRF830S Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

IRF830S Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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