IRF830S datasheet(6/6 Pages) KEXIN

Part #	IRF830S

Description	N-Channel MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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6 / 6 page

SMD Type

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MOSFET

N-Channel MOSFET

IRF830S (KRF830S)

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Typical Characterisitics

Fig. 14 - For N-Channel

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 Va

S D

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.

Period

Peak Dio de Recovery dV/dt Test Circuit

• dV/dt controlled by R g

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout con siderations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. VGS = 5 V for logic level devices

IRF830S Datasheet(PDF) 6 Page - Guangdong Kexin Industrial Co.,Ltd

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