5-1

Semiconductor

Features

• 8.1A and 6.5A, 275V and 250V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250V DC Rated - 120V AC Line System

Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17413.

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF234

TO-204AA

IRF234

IRF235

TO-204AA

IRF235

IRF236

TO-204AA

IRF236

IRF237

TO-204AA

IRF237

NOTE: When ordering, include the entire part number.

G

D

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

January 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

2208.3

IRF234, IRF235,

IRF236, IRF237

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,

N-Channel Power MOSFETs