IRF320 datasheet(2/7 Pages) INTERSIL

2 / 7 page

5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF320

IRF321

IRF322

IRF323

UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS

400

350

400

350

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR

400

350

400

350

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

3.3

2.1

3.3

2.1

2.8

1.8

2.8

1.8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.4

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS

190

Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL

Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V, (Figure 10)

IRF320, IRF322

400

IRF321, IRF323

350

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V

TJ = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

(Figure 7)

IRF320, IRF321

3.3

IRF322, IRF323

2.8

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 1.8A, VGS = 10V, (Figures 8, 9)

IRF320, IRF321

1.5

1.8

Ω

IRF322, IRF323

1.8

2.5

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 10V, ID = 2.0A, (Figure 12)

1.7

2.7

Turn-On Delay Time

td(ON)

VDD = 200V, ID ≈ 3.3A, RG = 18Ω, RL = 60Ω,

VGS = 10V, (Figures 17, 18)

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-10

Rise Time

-14

Turn-Off Delay Time

td(OFF)

-30

Fall Time

-13

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA, (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-12

Gate to Source Charge

Qgs

-4

Gate to Drain “Miller” Charge

Qgd

-8

IRF320, IRF321, IRF322, IRF323

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