IRFD210 datasheet(3/6 Pages) INTERSIL

3 / 6 page

4-283

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

0.6

Pulse Source to Drain Current

ISDM

2.5

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25

oC, I

SD = 0.6A, VGS = 0V (Figure 12)

2.0

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = 0.6A, dISD/dt = 100A/µs

290

Reverse Recovery Charge

QRR

TJ = 150

oC, I

SD = 0.6A, dISD/dt = 100A/µs

2.0

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. VDD = 20V, starting TJ = 25

oC, L = 112.7µH, RG = 50Ω, peak IAS = 2.2A.

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

TA, AMBIENT TEMPERATURE (

oC)

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

TA, AMBIENT TEMPERATURE (

oC)

100

150

0.6

0.4

0.3

0.2

0.1

125

0.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.1

0.001

1ms

10ms

100ms

100

µs

100

1000

TJ = MAX RATED

0.01

SINGLE PULSE

TC = 25

OPERATION IN THIS

AREA MAY BE

LIMITED BY RDS(ON)

10203040

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 9V

VGS = 4V

VGS = 5V

VGS = 7V

PULSE DURATION = 80

µs

VGS = 10V

VGS = 8V

VGS = 6V

DUTY CYCLE = 0.5% MAX

IRFD210

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