IRFD9110 datasheet(2/6 Pages) INTERSIL

2 / 6 page

4-40

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFD9110

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-100

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

-0.7

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

-3.0

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

1.0

Dissipation Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.008

W/oC

Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

190

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V, (Figure 9)

-100

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

-250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,

(Figure 6)

-0.7

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -0.3A, VGS = -10V, (Figures 8)

1.000

1.200

Ω

Forward Transconductance (Note 2)

gfs

VDS ≤ 50V, ID = -0.6A, (Figure 11)

0.59

0.88

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID = -0.7A, RG = 9.1Ω,

VGS =-10V, (Figures 16, 17),

RL = 70Ω for VDSS = 50V

RL = 56Ω for VDSS = 40V

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-15

Rise Time

-30

Turn-Off Delay Time

td(OFF)

-20

Fall Time

-20

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -0.7A, VDS = 0.8V x Rated BVDSS,

(Figures 13, 18, 19) Gate Charge is

Essentially Independent of Operating

Temperature

-11

Gate to Source Charge

Qgs

5.7

Gate to Drain “Miller” Charge

Qgd

5.3

Input Capacitance

CISS

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)

180

Output Capacitance

COSS

-85-

Reverse Transfer Capacitance

CRSS

-30-

Internal Drain Inductance

Measured From the Drain

Lead, 2mm (0.08in) From

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

4.0

Internal Source Inductance

Measured From the

Source Lead, 2mm

(0.08in) From Header to

Source Bonding Pad

6.0

Thermal Resistance Junction to Ambient

RθJA

Typical Socket Mount

120

oC/W

IRFD9110

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