IRFD9110 datasheet(3/6 Pages) INTERSIL

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4-41

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

-0.7

Pulse Source to Drain Current

(Note 3)

ISDM

-3.0

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25

oC, I

SD = -0.7A, VGS = 0V, (Figure 12)

-1.5

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = -0.7A, dISD/dt = 100A/µs

120

Reverse Recovery Charge6466

QRR

TJ = 150

oC, I

SD = -0.7A, dISD/dt = 100A/µs

6.0

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. VDD = 25V, starting TJ = 25

oC, L = 582mH, R

G = 25Ω, peak IAS = 0.7A. See Figures 14, 15.

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

TA, AMBIENT TEMPERATURE (

oC)

0.0

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

TA, AMBIENT TEMPERATURE (

oC)

100

150

-1.0

-0.8

-0.6

-0.4

-0.2

125

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

0.1

0.01

µs

1ms

10ms

100ms

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

TJ = MAX RATED

TC = 25

100

µs

-10

-20

-30

-40

-1

-2

-3

-4

-5

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -5V

VGS = -7V

VGS = -8V

VGS = -10V

VGS = -9V

VGS = -6V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

IRFD9110

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