4-45

File Number

2285.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFD9120

1.0A, 100V, 0.6 Ohm, P-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

P-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching convertors, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types

can be operated directly from integrated circuits.

Formerly developmental type TA17501.

Features

• 1.0A, 100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD9120

HEXDIP

IRFD9120

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet

July 1999