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IRFF210 Datasheet(PDF) 2 Page - Intersil Corporation

Part # IRFF210
Description  2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
PDF  7 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFF210 Datasheet(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFF210
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.2
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
9.0
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
± 20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
15
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.12
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
30
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
200
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
2.2
-
-
A
Gate to Source Leakage Forward
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 1.25A (Figures 8, 9)
-
1.0
1.500
Ω
Forward Transconductance (Note 2)
gfs
VGS > ID(ON) rDS(ON)MAX, ID = 1.25A (Figure 12)
0.8
1.3
-
S
Turn-On Delay Time
td(ON)
ID ≈ 2.2A, RG = 9.1Ω, VGS = 10V,
RL = 33Ω for VDS = 75V,
RL = 44Ω for VDS = 100V,
VDD ≈ 0.5BVDSS (Figures 15, 16) MOSFET
Switching Times are Essentially Independent of
Operating Temperature
-
8
15
ns
Rise Time
tr
-15
25
ns
Turn-Off Delay Time
td(OFF)
-10
15
ns
Fall Time
tf
-
8
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 2.2A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
5.0
7.5
nC
Gate to Source Charge
Qgs
-
2.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
3.0
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
135
-
pF
Output Capacitance
COSS
-60
-
pF
Reverse to Transfer Capacitance
CRSS
-16
-
pF
Internal Drain Inductance
LD
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad
-15
-
nH
Junction to Case
RθJC
-
-
8.33
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
175
oC/W
LS
LD
G
D
S
IRFF210



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