5-1

Semiconductor

Features

• 15A and 14A, 275V and 250V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250VDC Rated, 120VAC Line System Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17423.

Symbol

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFP244

TO-247

IRFP244

IRFP245

TO-247

IRFP245

IRFP246

TO-247

IRFP246

IRFP247

TO-247

IRFP247

NOTE: When ordering, include the entire part number.

D

G

S

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

July 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

2211.2

IRFP244, IRFP245,

IRFP246, IRFP247

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,

N-Channel Power MOSFETs