5-3

IRFP244, IRFP245, IRFP246, IRFP247

Input Capacitance

(Figure 11)

-

1300

-

pF

Output Capacitance

-

320

-

pF

Reverse Transfer Capacitance

-69

-

pF

Internal Drain Inductance

Measured fRom the

Drain Lead, 6mm

(0.25in) From Pack-

age to the Center of

Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

5.0

-

nH

Internal Source Inductance

Measured from The

Source Lead, 6mm

(0.25in) from the

Header to the Source

Bonding Pad

-

12.5

-

nH

Junction to Case

-

-

0.83

Junction to Ambient

Free Air Operation

-

-

30

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

-

-

15

A

Pulse Source to Drain Current

(Note 3)

-

-

60

A

Source to Drain Diode Voltage (Note 2)

-

-

1.8

V

Reverse Recovery Time

150

300

640

ns

Reverse Recovered Charge

1.6

3.4

7.2

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

G

D

S

G

D

S