4-341

File Number

2290.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFP360

23A, 400V, 0.200 Ohm, N-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17464.

Features

• 23A, 400V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFP360

TO-247

IRFP360

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Data Sheet

July 1999