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IRFP360 Datasheet(PDF) 2 Page - Intersil Corporation

Part # IRFP360
Description  23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
PDF  7 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP360 Datasheet(HTML) 2 Page - Intersil Corporation

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4-342
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP360
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
400
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
23
14
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
92
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
250
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
1200
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 10)
400
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA2
-
4
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
23
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
On Resistance (Note 2)
rDS(ON)
ID = 13A, VGS = 10V (Figures 8, 9)
-
0.18
0.20
Ω
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, IDS > 13A (Figure 12)
14
21
-
S
Turn-On Delay Time
td(ON)
VDD = 200V, ID ≈ 25A, RGS = 4.3Ω, VGS = 10V,
RL = 7.5Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-22
33
ns
Rise Time
tr
-
94
140
ns
Turn-Off Delay Time
td(OFF)
-
80
120
ns
Fall Time
tf
-66
99
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 25A, VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
68
100
nC
Gate to Source Charge
Qgs
-17
-
nC
Gate to Drain “Miller” Charge
Qgd
-24
-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
4000
-
pF
Output Capacitance
COSS
-
550
-
pF
Reverse Transfer Capacitance
CRSS
-97
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on Header
closer to Source and Gate
Pins and Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
Bonding Pad
-13
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.50
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP360



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