1

File Number

2307.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRF340

10A, 400V, 0.550 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is designed, tested and guaranteed to

withstand a specific level of energy in the breakdown

avalanche mode of operation. These MOSFETs are

designed for applications such as switching regulators,

switching converters, motor drivers, relay drivers, and drivers

for high power bipolar switching transistors requiring high

speed and low gate drive power. These types can be

operated directly from integrated circuits.

Formerly developmental type TA17424.

Features

• 10A, 400V

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF340

TO-204AE

IRF340

NOTE: When ordering, use the entire part number.

D

G

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet

March 1999