RFD8P05 datasheet(2/6 Pages) INTERSIL

2 / 6 page

4-113

Absolute Maximum Ratings

TC = 25

oC Unless Otherwise Speciﬁed

RFD8P05,

RFD8P05SM, RFP8P05

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-50

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

-50

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

-8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

-20

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.27

W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

See Figure 6

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 9)

-50

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 8)

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, TJ = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 8A, VGS = -10V (Figure 7)

0.300

Ω

Turn-On Time

tON

VDD = -25V, ID ≈ 4A, RG = 9.1Ω, RL = 6.25Ω,

VGS = -10V

Turn-On Delay Time

td(ON)

-16-

Rise Time

-30-

Turn-Off Delay Time

td(OFF)

-42-

Fall Time

-20-

Turn-Off Time

tOFF

100

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V VDD = -40V, ID = 8A,RL = 5Ω,

IG(REF) = -0.3mA

Gate Charge at -5V

Qg(-10)

VGS = 0 to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

Thermal Resistance Junction to Case

RθJC

3.125

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA, TO-252AA

100

oC/W

TO-220AB

62.5

oC/W

Source to Drain Diode Speciﬁcations TC = 25oC Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = -8A

-1.5

Reverse Recovery Time

trr

ISD = -8A, dISD/dt = 100A/µs

125

NOTE:

2. Pulse test: pulse width

≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

RFD8P05, RFD8P05SM, RFP8P05

RFD8P05 Datasheet(PDF) 2 Page - Intersil Corporation

RFD8P05 Datasheet(HTML) 2 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL