RFP30P06 datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-134

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFG30P06, RFP30P06

RF1S30P06SM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

-60

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-60

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

135

0.9

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

-60

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = -60V, VGS = 0V

-1

µA

VDS = 0.8 x Rated BVDSS, TC = 150

-25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -30A, VGS = -10V (Figure 9)

0.065

Ω

Turn-On Time

t(ON)

VDD = -30V, ID = 15A, RL = 2.00Ω, VGS = -10V

RG = 6.25Ω

(Figure 13)

Turn-On Delay Time

td(ON)

-15

Rise Time

-23

Turn-Off Delay Time

td(OFF)

-28

Fall Time

-18

Turn-Off Time

t(OFF)

100

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V

VDD = -48V, ID = 30A,

RL = 1.6Ω,

IG(REF) = 1.6mA

140

170

Gate Charge at -10V

Qg(-10)

VGS = 0 to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

5.5

6.6

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 12)

3200

Output Capacitance

COSS

800

Reverse Transfer Capacitance

CRSS

175

Thermal Resistance, Junction to Case

RθJC

1.11

oC/W

Thermal Resistance, Junction to Ambient

RθJA

TO-220, TO-263

oC/W

TO-247

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

Source to Drain Diode Voltage (Note 2)

VSD

ISD = -30A

-1.5

Diode Reverse Recovery Time

tRR

ISD = -30A, dISD/dt = -100A/µs

150

NOTE:

2. Pulse test: pulse width

≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

RFG30P06, RFP30P06, RF1S30P06SM

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