5-1

Semiconductor

Features

• 2A, 120V and 150V

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA09196.

Symbol

Packaging

JEDEL TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP2N12

TO-220AB

RFP2N12

RFP2N15

TO-220AB

RFP2N15

NOTE: When ordering, include the entire part number.

G

D

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

September 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

2882.1

RFP2N12,

RFP2N15

2A, 120V and 150V, 1.750 Ohm,

N-Channel Power MOSFETs

[ /Title

(RFP2N

12,

RFP2N1

5)

/Subject

(2A,

120V

and

150V,

1.75

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode