4-

518

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

RFP2N20

2A, 200V, 3.500 Ohm, N-Channel Power

MOSFET

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09289.

Features

• 2A, 200V

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP2N20

TO-220AB

RFP2N20

NOTE: When ordering, include the entire part number.

G

D

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

July 1999

File Number

2881.2

Data Sheet