RFP2N20 datasheet(2/5 Pages) INTERSIL

2 / 5 page

519

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFP2N20

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

200

Drain to Gate Voltage (RGS = 20k

Ω) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

200

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2

W/ oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0

200

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA, (Figure 8)

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS

µA

VDS = 0.8 x Rated BVDSS, TC = 125

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 2A, VGS = 10V, (Figures 6, 7)

3.500

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 2A, VGS = 10V

7.0

Turn-On Delay Time

td(ON)

ID ≈ 1A, VDD = 100V, RG = 50Ω

VGS = 10V, RL = 96.5Ω

(Figure 10)

-15

Rise Time

-20

Turn-Off Delay Time

td(OFF)

-25

Fall Time

-15

Input Capacitance

CISS

VGS = 0V, VDS = 25V

f = 1MHz, (Figure 9)

200

Output Capacitance

COSS

Reverse-Transfer Capacitance

CRSS

Thermal Resistance Junction to Case

θJC

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 1A

1.4

Diode Reverse Recovery Time

trr

ISD = 2A, dlSD/dt = 50A/µs

200

NOTES:

2. Pulsed test: width

≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFP2N20

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