2SC4536 datasheet(2/10 Pages) CEL

2 / 10 page

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

Collector Current

250

Total Power Dissipation

NE461002

3.75

NE461343

2.0

Junction Temperature

NE46100

°C

200

NE46134

°C

150

TSTG

Storage Temperature

NE46100

°C

-65 to +200

NE46134

°C

-65 to +150

NE46100, NE46134

COLLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Collector to Emitter Voltage, VCE (V)

Notes:

1. Operation in excess of any one of these parameters may result in

permanent damage.

2. Chip mounted on an infinite heat sink (see AN-1001 for handling

instructions).

3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided

ceramic substrate (copper plating).

NE46100, NE46134

NOISE FIGURE vs. COLLECTOR CURRENT

VCE = 10 V, f = 1 GHz

NE46100, NE46134

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Collector Current, Ic (mA)

Ambient Temperature, TA (°C)

NE46134

TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ.

NFOPT

ΓOPT

(GHz)

(dB)

MAG

ANG

RN/50

VCC = 10 V, IC = 50 mA

0.5

1.5

13.5

0.34

-176

0.09

TYPICAL PERFORMANCE CURVES (TA=25°C)

NE46134

INSERTION POWER GAIN AND MAXIMUM

AVAILABLE GAIN vs. COLLECTOR CURRENT

VCE = 10 V, f = 1 GHz

Collector Current, IC (mA)

RS = RL = 50 Ω Untuned

MAG

|S21E| 2

100

300

100

IB = 0.6 mA

0.5 mA

0.4 mA

0.3 mA

0.2 mA

0.1 mA

100

150

200

87.5

4.0

3.75

3.0

2.0

1.0

0.4

NE46100

RTH (J-C)

30˚C/W

WITH INFINITE

HEAT SINK

NE46134

RTH (J-C)

32.5˚C/W

WITH INFINITE

HEAT SINK

NE46134

RTH (J-A)

312.5˚C/W

WITH INFINITE

HEAT SINK

100

200

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