DATA SHEET

SILICON TRANSISTOR

Document No. P10386EJ2V0DS00 (2nd edition)

(Previous No. TD-2400)

Date Published July 1995 P

NE68119 / 2SC5007

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The

NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal

amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2

process) which is a proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

•

•

•

Low NF

•

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

NE68119-A

2SC5007

-A

50 pcs./Unit

NE68119-T1-A

2SC5007-T1

-A

3 kpcs./Reel

*

To order evaluation samples, please contact your nearby sales

office. Unit sample quantity shall be 50 pcs.

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65

mA

Total Power Dissipation

125

mW

Junction Temperature

150

˚ C

Storage Temperature

–65 to +150

˚ C

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

1.6 ± 0.1

0.8 ± 0.1

2

1

3

PACKAGE DIMENSIONS

in millimeters

1. Emitter

2. Base

3. Collector

JEITA

Part No.