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IR2111 Datasheet(PDF) 1 Page - International Rectifier |
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IR2111 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  V CC V B V S HO LO IN COM IN up to 600V TO LOAD V CC Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n CMOS Schmitt-triggered inputs with pull-down n Matched propagation delay for both channels n Internally set deadtime n High side output in phase with input Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Product Summary VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 850 & 150 ns Deadtime (typ.) 700 ns Packages CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-39 Next Data Sheet Index Previous Datasheet To Order |
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