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IRCZ34 Datasheet(PDF) 2 Page - International Rectifier |
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IRCZ34 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 6 page  C-8 IRCZ34 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 120 230 ns TJ = 25°C, IF = 30A Qrr Reverse Recovery Charge ––– 0.70 1.4 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 120 ––– ––– 30 A S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.050 Ω VGS = 10V, ID = 18A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 9.4 ––– ––– S VDS = 25V, ID = 18A ––– ––– 25 VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 46 ID = 30A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 22 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 30V tr Rise Time ––– 100 ––– ID = 30A td(off) Turn-Off Delay Time ––– 29 ––– RG = 12Ω tf Fall Time ––– 52 ––– RD = 1.0Ω, See Fig. 10 L D Internal Drain Inductance ––– 4.5 ––– L C Internal Source Inductance ––– 7.5 ––– Ciss Input Capacitance ––– 1300 ––– VGS = 0V Coss Output Capacitance ––– 640 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 96 ––– ƒ = 1.0MHz, See Fig. 5 r Current Sensing Ratio 1340 ––– 1480 ––– ID = 30A, VGS = 10V Coss Output Capacitance of Sensing Cells ––– 9.0 ––– pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz nH Between lead, 6 mm (0.25 in.) from package and center of die contact Drain-to-Source Leakage Current IDSS IGSS Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 0.019mH RG = 25Ω, IAS = 30A. (See Figure 12) ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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