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IRF5802 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF5802
Description  Power MOSFET(Vdss=150V, Id=0.9A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5802 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
1/23/01
IRF5802
SMPS MOSFET
HEXFET® Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
0.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
0.7
A
IDM
Pulsed Drain Current

7.0
PD @TA = 25°C
Power Dissipation
„
2.0
W
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
†
7.1
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
 through † are on page 8
PD- 94086
VDSS
RDS(on) max
ID
150V
1.2
Ω
Ω
Ω
Ω
Ω@V
GS = 10V
0.9A
TSOP-6
3
2
1
G
D
D
S
D
4
5
6
D
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
62.5
°C/W
Thermal Resistance


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