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IRF5802 Datasheet(PDF) 2 Page - International Rectifier |
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IRF5802 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF5802 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 0.55 ––– ––– S VDS = 50V, ID = 0.54A Qg Total Gate Charge ––– 4.5 6.8 ID = 0.54A Qgs Gate-to-Source Charge ––– 1.0 1.5 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = 10V, td(on) Turn-On Delay Time ––– 6.0 ––– VDD = 75V tr Rise Time ––– 1.6 ––– ID = 0.54A td(off) Turn-Off Delay Time ––– 7.5 ––– RG = 6.0Ω tf Fall Time ––– 9.2 ––– VGS = 10V Ciss Input Capacitance ––– 88 ––– VGS = 0V Coss Output Capacitance ––– 26 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 7.7 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 110 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 14 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 3.0 ––– VGS = 0V, VDS = 0V to 120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 9.5 mJ IAR Avalanche Current ––– 0.9 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.54A, VGS = 0V trr Reverse Recovery Time ––– 46 69 ns TJ = 25°C, IF = 0.54A Qrr Reverse RecoveryCharge ––– 55 83 nC di/dt = 100A/µs Diode Characteristics 1.8 18 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.2 Ω VGS = 10V, ID = 0.54A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current |
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