IRF5850 datasheet(1/9 Pages) IRF

Part #	IRF5850

Description	Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)

PDF	9 Pages

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 9 page

Parameter

Max.

Units

VDS

Drain- Source Voltage

-20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-2.2

ID @ TA= 70°C

Continuous Drain Current, VGS @ -4.5V

-1.8

A

IDM

Pulsed Drain Current

-9.0

PD @TA = 25°C

Power Dissipation

0.96

PD @TA = 70°C

Power Dissipation

0.62

Linear Derating Factor

7.7

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

7/25/00

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

130

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRF5850

HEXFET® Power MOSFET

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where

printed circuit board space is at a premium and where

maximum

functionality is required. With two die per

package, the IRF5850 can provide the functionality of two

SOT-23 packages in a smaller footprint. Its unique thermal

design and RDS(on) reduction enables an increase in

current-handling capability.

VDSS = -20V

RDS(on) = 0.135Ω

Description

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

PD - 93947

TSOP-6

Top View

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IRF5850 Datasheet(PDF) 1 Page - International Rectifier

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