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on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

DATA SHEET

Document No. D18007EJ4V0DS00 (4th edition)

Date Published September 2006 NS CP(K)

Printed in Japan

2006

COMPOUND TRANSISTOR

HD2 SERIES

FEATURES

• High current drives such as IC outputs and actuators available

• On-chip bias resistor

• The zener diode connected between the collector and base of the transistor

• Low power consumption during drive

HD2 SERIES LISTS

Products

Marking

Ω)

Ω)

HD2A3M

LA

1.0

1.0

HD2F3P

LB

2.2

10

HD2L3N

LC

4.7

10

HD2A4M

LD

10

10

HD2L2Q

LE

0.47

4.7

HD2F2Q

LF

0.22

2.2

HD2A4A

LY

−

10

°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

60

±10

V

Collector to emitter voltage

60

±10

V

Emitter to base voltage

10

V

Collector current (DC)

1.0

A

Collector current (Pulse)

Note1

2.0

A

Base current (DC)

20

mA

Total power dissipation

Note2

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, duty cycle ≤ 50 %

2. When 0.7 mm

× 16 cm

PACKAGE DRAWING (UNIT: mm)