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IRF640S Datasheet(PDF) 1 Page - International Rectifier |
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IRF640S Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page ![]() IRF640S/L HEXFET® Power MOSFET PD -90902B S D G Description 7/20/99 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.0 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
11 A IDM Pulsed Drain Current
72 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
580 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings l Surface Mount (IRF640S) l Low-profile through-hole (IRF640L) l Available in Tape & Reel (IRF640S) l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated 2 D P ak TO-26 2 VDSS = 200V RDS(on) = 0.18Ω ID = 18A Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. www.irf.com 1 |
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