IRF640S datasheet(2/10 Pages) IRF

2 / 10 page

IRF640S/L

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

200

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.29

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

0.18

Ω

VGS = 10V, ID = 11A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

6.7

–––

VDS = 50V, ID = 11A

–––

µA

VDS = 200V, VGS = 0V

–––

250

VDS = 160V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Total Gate Charge

–––

ID = 18A

Qgs

Gate-to-Source Charge

–––

VDS =160V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

VDD =100V

Rise Time

–––

ID = 18A

td(off)

Turn-Off Delay Time

–––

RG = 9.1Ω

Fall Time

–––

RD = 5.4Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

1300 –––

VGS = 0V

Coss

Output Capacitance

–––

430

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

130

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

7.5

Internal Source Inductance

DD = 50V, starting TJ = 25°C, L = 2.7mH

RG = 25Ω, IAS = 18A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ 18A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Uses IRF640 data and test conditions

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

2.0

TJ = 25°C, IS = 18A, VGS = 0V

trr

Reverse Recovery Time

–––

300

610

TJ = 25°C, IF = 18A

Qrr

Reverse Recovery Charge

–––

3.4

7.1

µC

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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