Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient

ƒ

–––

35

Junction-to-Ambient

„

–––

12.5

Junction-to-Ambient

…

–––

20

°C/W

Junction-to-Case

†

–––

3.0

Junction-to-PCB mounted

–––

1.0

IRF6601

Parameter

Max.

Units

Drain- Source Voltage

20

V

85

26

20

A

Pulsed Drain Current



200

Power Dissipation

3.6

Power Dissipation

2.3

Power Dissipation

42

Linear Derating Factor

28

mW/°C

Gate-to-Source Voltage

±20

V

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

www.irf.com

1

to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer

in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are

critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601

offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Description

Techniques

DirectFET

Thermal Resistance

3/25/02

20V

3.8m

26A

5.0m

21A

PD - 94366C