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IRF7555 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF7555
Description  Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)
PDF  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7555 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
2/2/00
IRF7555
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
100
°C/W
Parameter
Max.
Units
VDS
Drain-Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-3.4
A
IDM
Pulsed Drain Current

-34
PD @TA = 25°C
Maximum Power Dissipation
„
1.25
W
PD @TA = 70°C
Maximum Power Dissipation
„
0.8
W
Linear Derating Factor
10
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
EAS
Single Pulse Avalanche Energy
„
36
mJ
dv/dt
Peak Diode Recovery dv/dt
‚
1.1
V/ns
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
240 (1.6mm from case)
VDSS = -20V
RDS(on) = 0.055Ω
Micro8
™
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
D1
D1
D2
D2
G1
S2
G2
S1
To p V ie w
8
1
2
3
4
5
6
7
q
Trench Technology
q
Ultra Low On-Resistance
q
Dual P-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
Description
PD -91865B


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