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IRF7603 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7603
Description  Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7603 Datasheet(HTML) 2 Page - International Rectifier

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IRF7603
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 3.7A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
53
80
ns
TJ = 25°C, IF = 3.7A
Qrr
Reverse RecoveryCharge
–––
87
130
nC
di/dt = 100A/µs
ƒ
Source-Drain Ratings and Characteristics
A
–––
–––
30
–––
–––
1.8
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.029 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.035
VGS = 10V, ID = 3.7A
ƒ
–––
––– 0.060
VGS = 4.5V, ID = 1.9A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
4.3
–––
–––
S
VDS = 10V, ID = 1.9A
–––
–––
1.0
VDS = 24V, VGS = 0V
–––
–––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
18
27
ID = 3.7A
Qgs
Gate-to-Source Charge
–––
2.4
3.6
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.6
8.4
VGS = 10V, See Fig. 6 and 9
ƒ
td(on)
Turn-On Delay Time
–––
5.7
–––
VDD = 15V
tr
Rise Time
–––
28
–––
ID = 3.7A
td(off)
Turn-Off Delay Time
–––
18
–––
RG = 6.2
Ω
tf
Fall Time
–––
12
–––
RD = 4.0
Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
520
–––
VGS = 0V
Coss
Output Capacitance
–––
200
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
80
–––
ƒ = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
S
D
G
‚ ISD ≤ 3.7A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.



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