IRF7702 datasheet(1/8 Pages) IRF

Part #	IRF7702

Description	Power MOSFET(Vdss=-12V)

PDF	8 Pages

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 8 page

Parameter

Max.

Units

VDS

Drain- Source Voltage

-12

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ -4.5V

±8.0

ID @ TC = 70°C

Continuous Drain Current, VGS @ -4.5V

±7.0

A

IDM

Pulsed Drain Current

±70

PD @TC = 25°C

Power Dissipation

1.5

PD @TC = 70°C

Power Dissipation

0.96

Linear Derating Factor

0.01

W/°C

VGS

Gate-to-Source Voltage

± 8.0

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

6/19/00

IRF7702

HEXFET® Power MOSFET

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

83

°C/W

Thermal Resistance

Description

Absolute Maximum Ratings

W

www.irf.com

1

l Ultra Low On-Resistance

l -1.8V Rated

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile ( < 1.1mm)

l Available in Tape & Reel

HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides thedesigner

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

PD - 93849C

PROVISIONAL

TSSOP-8

VDSS

RDS(on) max

ID

0.014@VGS = -4.5V

-8.0A

-12V

0.019@VGS = -2.5V

-7.0A

0.027@VGS = -1.8V

-5.8A

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D

Similar Part No. - IRF7702

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF7702	144Kb / 8P	Ultra Low On-Resistance
	IRF7702GPBF	233Kb / 8P	HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated
	IRF7702GPBF	243Kb / 9P	Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
	IRF7702PBF	184Kb / 8P	HEXFET Power MOSFET
	IRF7702TR	144Kb / 8P	Ultra Low On-Resistance

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