Electronic Components Datasheet Search
  English  ▼

X  

IRF7807 Datasheet(PDF) 4 Page - International Rectifier

Part # IRF7807
Description  Chip-Set for DC-DC Converters
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7807 Datasheet(HTML) 4 Page - International Rectifier

  IRF7807 Datasheet HTML 1Page - International Rectifier IRF7807 Datasheet HTML 2Page - International Rectifier IRF7807 Datasheet HTML 3Page - International Rectifier IRF7807 Datasheet HTML 4Page - International Rectifier IRF7807 Datasheet HTML 5Page - International Rectifier IRF7807 Datasheet HTML 6Page - International Rectifier IRF7807 Datasheet HTML 7Page - International Rectifier IRF7807 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
www.irf.com
4
IRF7807/IRF7807A
5V Supply : Q1=Q2=IRF7807
89
90
91
92
93
94
95
11.5
22.5
33.5
44.5
5
Load Current (A)
Vin = 10V
Vin = 14V
Vin=24V
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage
of this new technology platform is that the MOSFETs
it produces are suitable for both control FET and syn-
chronous FET applications. This has been demon-
strated with the 3.3V and 5V converters. (Fig 3 and
Fig 4). In these applications the same MOSFET IRF7807
was used for both the control FET (Q1) and the syn-
chronous FET (Q2). This provides a highly effective
cost/performance solution.
3.3V Supply : Q1=Q2=IRF7807
84
85
86
87
88
89
90
91
92
93
11.522.5
33.5
44.5
5
Load Current (A)
Vin = 10V
Vin = 14V
Vin = 24V
Figure 3
Figure 4
Figure 2: Q
oss Characteristic
For the synchronous MOSFET Q2, R
ds(on) is an im-
portant characteristic; however, once again the impor-
tance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
oss and re-
verse recovery charge Q
rr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
in. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
gd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807 can be downloaded in ma-
chine readable format at www.irf.com.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com