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IRF7807 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7807 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Symbol IRF7807 IRF7807A Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 Continuous Drain or Source 25°C I D 8.3 8.3 A Current (V GS ≥ 4.5V) 70°C 6.6 6.6 Pulsed Drain Current I DM 66 66 Power Dissipation 25°C P D 2.5 W 70°C 1.6 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 2.5 2.5 A Pulsed source Current I SM 66 66 • N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. HEXFET® Chip-Set for DC-DC Converters Absolute Maximum Ratings Parameter Max. Units Maximum Junction-to-Ambient Rθ JA 50 °C/W Thermal Resistance To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S IRF7807/IRF7807A www.irf.com 1 10/10/00 SO-8 IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m Ω 25m Ω Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Device Features PD – 91747C |
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Similar Description - IRF7807 |
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