IRFP2907 datasheet(1/9 Pages) IRF

Part #	IRFP2907

Description	Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A??

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

209

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

148

A

IDM

Pulsed Drain Current

840

PD @TC = 25°C

Power Dissipation

470

W

Linear Derating Factor

3.1

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

1970

mJ

IAR

Avalanche Current

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

IRFP2907

HEXFET® Power MOSFET

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET® Power MOSFETs

utilizes the lastest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

S

D

G

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.32

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient

–––

40

Thermal Resistance

VDSS = 75V

RDS(on) = 4.5mΩ

ID = 209A

Description

9/7/00

www.irf.com

1

TO-247AC

q

Advanced Process Technology

q

Ultra Low On-Resistance

q

Dynamic dv/dt Rating

q

175°C Operating Temperature

q

Fast Switching

q

Repetitive Avalanche Allowed up to Tjmax

Benefits

Typical Applications

q

Integrated Starter Alternator

q

42 Volts Automotive Electrical Systems

AUTOMOTIVE MOSFET

PD -93906A

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