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IRFP460P Datasheet(PDF) 2 Page - International Rectifier |
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IRFP460P Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com IRFP460P Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 13 ––– ––– SVDS = 50V, ID =12A ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS =-20V Qg Total Gate Charge ––– ––– 210 ID = 20A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 18 ––– VDD = 250V tr Rise Time ––– 59 ––– ID = 20A td(off) Turn-Off Delay Time ––– 110 ––– RG = 4.3Ω tf Fall Time ––– 58 ––– RD = 13Ω,See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 4200 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 350 ––– pF ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 13 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 20A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L =4.8mH RG = 25Ω, IAS = 20A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoverCharge ––– 5.7 8.6 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 20 80 A |
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